KHB3D0N70F Ver la hoja de datos (PDF) - KEC
Número de pieza
componentes Descripción
Fabricante
KHB3D0N70F Datasheet PDF : 2 Pages
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KHB3D0N70P/F
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Drain Cut-off Current
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
BVDSS
ID=250 A, VGS=0V
BVDSS/ Tj ID=250 A, Referenced to 25
Vth
VDS=VGS, ID=250 A
IDSS
VDS=700V, VGS=0V,
IGSS
VGS= 30V, VDS=0V
RDS(ON)
VGS=10V, ID=1.5A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS=560V, ID=3.0A
VGS=10V
(Note4, 5)
VDD=350V, RG=25
ID=3.0A
(Note4, 5)
VDS=25V, VGS=0V, f=1.0MHz
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS
VGS<Vth
ISP
VSD
IS=3.0A, VGS=0V
trr
IS=3.0A, VDD=350V,
Qrr
dIs/dt=100A/ s
(Note 4)
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =71mH, IS=3.0A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 3.0A, dI/dt 200A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
MIN. TYP. MAX. UNIT
700
-
-
V
-
1
-
V/
2.0
-
4.0
V
-
-
10
A
-
-
100 nA
-
3.0
3.5
-
20.5 25.6
-
3
-
nC
-
10.5
-
-
11.5 33
-
48.5 107
ns
-
50
110
-
57.5 125
-
642 835
-
67.2 87.4 pF
-
10.2 13.3
-
-
3.0
A
-
-
12
-
-
1.6
V
-
730
-
ns
-
3.2
-
C
2007. 1. 4
Revision No : 1
2/2
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