KF8N60P(2008) Ver la hoja de datos (PDF) - KEC
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Fabricante
KF8N60P Datasheet PDF : 7 Pages
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KF8N60P/F
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
BVDSS
ID=250 A, VGS=0V
BVDSS/ Tj ID=250 A, Referenced to 25
IDSS
VDS=600V, VGS=0V
Vth
VDS=VGS, ID=250 A
IGSS
VGS= 30V, VDS=0V
RDS(ON)
VGS=10V, ID=4A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS=480V, ID=8A
VGS=10V
(Note4,5)
VDD=300V
RL=37.5
RG=25
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
Continuous Source Current
Pulsed Source Current
IS
VGS<Vth
ISP
Diode Forward Voltage
VSD
IS=8.0A, VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IS=8.0A, VGS=0V,
Qrr
dIs/dt=100A/ s
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =6.6mH, IS=8A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 8.0A, dI/dt 200A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
MIN. TYP. MAX. UNIT
600
-
-
V
-
0.65
-
V/
-
-
10
A
2
-
4
V
-
-
100 nA
-
0.85 1.05
-
24
-
-
5.4
-
nC
-
10
-
-
27
-
-
32
-
ns
-
72
-
-
30
-
-
865
-
-
111
-
pF
-
14
-
-
-
8
A
-
-
32
-
-
1.4
V
-
370
-
ns
-
3.9
-
C
Marking
1
1
KF8N60
KF8N60
F
813
2
P
801
2
1 PRODUCT NAME
2 LOT NO
2008. 10. 2
Revision No : 1
2/7
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