KF4N65P Ver la hoja de datos (PDF) - KEC
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KF4N65P Datasheet PDF : 7 Pages
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SEMICONDUCTOR
TECHNICAL DATA
KF4N65P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
FEATURES
·VDSS=650V, ID=3.6A
·Drain-Source ON Resistance :
RDS(ON)(Max)=2.5Ω @VGS=10V
·Qg(typ.)= 12nC
MAXIMUM RATING (Tc=25℃)
CHARACTERISTIC
RATING
SYMBOL
KF4N65P KF4N65F
Drain-Source Voltage
VDSS
650
Gate-Source Voltage
Drain Current
@TC=25℃
@TC=100℃
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25℃
Derate above 25℃
VGSS
ID
IDP
EAS
EAR
dv/dt
PD
±30
3.6
3.6*
2.3
2.3*
8.4
8.4*
103
3.1
4.5
83.3
37.9
0.67
0.30
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55～150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
1.5
3.3
Thermal Resistance,
Junction-to-Ambient
RthJA
62.5
62.5
* : Drain current limited by maximum junction temperature.
UNIT
V
V
A
mJ
mJ
V/ns
W
W/℃
℃
℃
℃/W
℃/W
PIN CONNECTION
D
KF4N65P
A
E
I
O
C
F
G
B
Q
K
P
M
L
J
D
NN
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A
9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D
0.8 +_ 0.1
E
3.6 +_ 0.2
F
2.8 +_ 0.1
G
3.7
H 0.5+0.1/-0.05
I
1.5
J 13.08 +_ 0.3
K
1.46
L
1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O
4.5 +_ 0.2
P
2.4 +_ 0.2
Q
9.2 +_ 0.2
TO-220AB
KF4N65F
A
C
E
L
M
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E
3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q
4.7 +_ 0.2
R 2.76 +_ 0.2
* Single Gauge Lead Frame
TO-220IS (1)
G
S
2011. 6. 21
Revision No : 0
1/7
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