KF3N60D Ver la hoja de datos (PDF) - KEC
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KF3N60D Datasheet PDF : 7 Pages
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KF3N60D/I
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage
BVDSS
ID=250㎂ , VGS=0V
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj ID=250㎂, Referenced to 25℃
Drain Cut-off Current
IDSS
VDS=600V, VGS=0V,
Gate Threshold Voltage
Vth
VDS=VGS, ID=250㎂
Gate Leakage Current
IGSS
VGS=±30V, VDS=0V
Drain-Source ON Resistance
RDS(ON)
VGS=10V, ID=1.15A
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS=480V, ID=3A
VGS=10V
(Note4,5)
Qgd
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
td(on)
tr
td(off)
tf
VDD=300V
ID=3A
RG=25Ω
(Note4,5)
Input Capacitance
Ciss
Output Capacitance
Coss
VDS=25V, VGS=0V, f=1.0MHz
Reverse Transfer Capacitance
Crss
Source-Drain Diode Ratings
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS
VGS<Vth
ISP
VSD
IS=2.3A, VGS=0V
trr
IS=3A, VGS=0V,
Qrr
dIs/dt=100A/㎲
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=24.5mH, IS=3A, VDD=50V, RG=25Ω, Starting Tj=25℃.
Note 3) IS≤3A, dI/dt≤100A/㎲, VDD≤BVDSS, Starting Tj=25℃.
Note 4) Pulse Test : Pulse width ≤300㎲, Duty Cycle≤2%.
Note 5) Essentially independent of operating temperature.
Marking
1
1
KF3N60
KF3N60
D 001
2
I
001
2
1 PRODUCT NAME
2 LOT NO
MIN. TYP. MAX. UNIT
600
-
-
V
-
0.61
-
V/℃
-
-
10
㎂
2.5
-
4.5
V
-
- ±100 nA
-
2.8
3.3
Ω
-
8.5
-
-
1.8
-
nC
-
3.6
-
-
25
-
-
25
-
ns
-
40
-
-
20
-
-
355
-
-
45
-
pF
-
4.4
-
-
-
3
A
-
-
12
-
-
1.4
V
-
300
-
ns
-
1.5
-
μC
2012. 7. 12
Revision No : 1
2/7
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