KF2N60D Ver la hoja de datos (PDF) - KEC
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KF2N60D Datasheet PDF : 6 Pages
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KF2N60D/I
ELECTRICAL CHARACTERISTICS (Tc=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
BVDSS
ID=250㎂ , VGS=0V
ΔBVDSS/ΔTj ID=250㎂, Referenced to 25℃
IDSS
VDS=600V, VGS=0V,
Vth
VDS=VGS, ID=250㎂
IGSS
VGS=±30V, VDS=0V
RDS(ON)
VGS=10V, ID=1A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS=480V, ID=2A
VGS=10V
(Note4,5)
VDD=300V
ID=2A
RG=25Ω
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
Continuous Source Current
Pulsed Source Current
IS
VGS<Vth
ISP
Diode Forward Voltage
VSD
IS=2A, VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IS=2A, VGS=0V,
Qrr
dIs/dt=100A/㎲
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=28mH, IS=2A, VDD=50V, RG=25Ω, Starting Tj=25℃.
Note 3) IS≤2A, dI/dt≤100A/㎲, VDD≤BVDSS, Starting Tj=25℃.
Note 4) Pulse Test : Pulse width ≤300㎲, Duty Cycle≤2%.
Note 5) Essentially independent of operating temperature.
Marking
MIN. TYP. MAX. UNIT
600
-
-
V
-
0.6
-
V/℃
-
-
10
㎂
2.5
-
4.5
V
-
- ±100 nA
-
3.7
4.4
Ω
-
6.0
-
-
1.0
-
nC
-
2.8
-
-
10
-
-
20
-
ns
-
25
-
-
20
-
-
270
-
-
35
-
pF
-
3.9
-
-
-
2
A
-
-
8
-
-
1.4
V
-
290
-
ns
-
0.9
-
μC
1
1
KF2N60
KF2N60
D 001
2
I
001
2
1 PRODUCT NAME
2 LOT NO
2011. 9. 21
Revision No : 1
2/6
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