LU024Z Ver la hoja de datos (PDF) - VBsemi Electronics Co.,Ltd
Número de pieza
componentes Descripción
Fabricante
LU024Z Datasheet PDF : 7 Pages
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LU024Z
www.VBsemi.tw
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VDS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 125 °C
VDS = 60 V, VGS = 0 V, TJ = 150 °C
VDS ≥ 10 V, VGS = 10 V
VGS = 10 V, ID = 12 A
VGS = 4.5 V, ID = 10 A
VDS = 15 V, ID = 10 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Ciss
Coss
Crss
Qg
VGS = 0 V, VDS = 30 V, f = 1 MHz
VDS = 30 V, VGS = 10 V, ID = 10 A
Gate-Source Chargec
Gate-Drain Chargec
Qgs
VDS = 30 V, VGS = 4.5 V, ID = 10 A
Qgd
Gate Resistance
Rg
f = 1 MHz
Turn-On Delay Timec
td(on)
Rise Timec
Turn-Off Delay Timec
tr
td(off)
VDD = 30 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
Fall Timec
tf
Drain-Source Body Diode Ratings and Characteristics TC = 25 °Cb
Continuous Current
IS
Pulsed Current
Forward Voltagea
Reverse Recovery Time
ISM
VSD
IF = 10 A, VGS = 0 V
trr
Peak Reverse Recovery Current
IRM(REC)
IF = 10 A, dI/dt = 100 A/µs
Reverse Recovery Charge
Qrr
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min.
60
2.0
50
0.4
Typ.
Max.
3.5
± 250
1
50
250
0.032
0.037
110
1100
281
130
46
28
7
6.7
2
4
8
16
9
18
35
53
9
18
50
100
0.75
1.5
34
51
2
3
34
51
Unit
V
nA
µA
A
Ω
S
pF
nC
Ω
ns
A
V
ns
A
nC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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