LU120N Ver la hoja de datos (PDF) - VBsemi Electronics Co.,Ltd
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LU120N Datasheet PDF : 7 Pages
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LU120N
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
100
RDS(on) ()
0.115 at VGS = 10 V
0.120 at VGS = 6 V
ID (A)
15
15
FEATURES
• DT-Trench Power MOSFET
• 175 °C Junction Temperature
• 100 % Rg Tested
APPLICATIONS
• Primary Side Switch
TO-251
D
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GDS
Top View
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
100
V
VGS
± 20
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C
TC = 125 °C
ID
15
8.7
Pulsed Drain Current
IDM
45
A
Continuous Source Current (Diode Conduction)
IS
15
Avalanche Current
IAR
15
Repetitive Avalanche Energy (Duty Cycle 1 %)
L = 0.1 mH
EAR
11.3
mJ
Maximum Power Dissipation
TC = 25 °C
TA = 25 °C
PD
61b
2.7a
W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambienta
Junction-to-Case
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See SOA curve for voltage derating.
t 10 s
Steady State
Symbol
RthJA
RthJC
Typical
16
45
2
Maximum
20
55
2.4
Unit
°C/W
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