CEU02N7G Ver la hoja de datos (PDF) - Chino-Excel Technology

Número de pieza

componentes Descripción

Fabricante

CEU02N7G

N-Channel Enhancement Mode Field Effect Transistor

Chino-Excel Technology 

CED02N7G/CEU02N7G

Electrical Characteristics Tc = 25 C unless otherwise noted

Parameter

Symbol

Test Condition

Min

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

On Characteristics b

BVDSS

IDSS

IGSSF

IGSSR

VGS = 0V, ID = 250µA

700

VDS = 700V, VGS = 0V

VGS = 30V, VDS = 0V

VGS = -30V, VDS = 0V

Gate Threshold Voltage

Static Drain-Source

On-Resistance

VGS(th)

RDS(on)

VGS = VDS, ID = 250µA

2

VGS = 10V, ID = 1A

Dynamic Characteristics c

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics c

gFS

Ciss

Coss

Crss

VDS = 50V, ID = 1A

VDS = 25V, VGS = 0V,

f = 1.0 MHz

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

td(on)

tr

td(off)

VDD = 300V, ID = 1.9A,

VGS = 10V, RGEN = 18Ω

Turn-Off Fall Time

tf

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Qg

Qgs

VDS = 480V, ID = 1.9A,

VGS = 10V

Qgd

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

IS

Drain-Source Diode Forward Voltage b

VSD

VGS = 0V, IS = 1A

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature .

b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .

c.Guaranteed by design, not subject to production testing.

d.L =10mH, IAS =1.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C

Typ

5.4

1.5

315

55

20

14

12.5

23

10

9

1.5

5

Max Units

V

25

µA

100 nA

-100 nA

4

V

6.75 Ω

S

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

1.6

A

1.5

V

2

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