CEU02N6G Ver la hoja de datos (PDF) - Chino-Excel Technology

Número de pieza

componentes Descripción

Fabricante

CEU02N6G

N-Channel Enhancement Mode Field Effect Transistor

Chino-Excel Technology 

CED02N6G/CEU02N6G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

600V, 2A, RDS(ON) = 5Ω @VGS = 10V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

Lead free product is acquired.

D

TO-251 & TO-252 package.

D

G

G

S

G

DS

CEU SERIES

TO-252(D-PAK)

CED SERIES

TO-251(I-PAK)

S

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Parameter

Symbol

Limit

Drain-Source Voltage

Gate-Source Voltage

VDS

600

VGS

±30

Drain Current-Continuous @ TC = 25 C

@ TC = 100 C

ID

2

1.3

Drain Current-Pulsed a

IDM

8

Maximum Power Dissipation @ TC = 25 C

- Derate above 25 C

PD

52

0.4

Single Pulsed Avalanche Energy e

EAS

11.25

Single Pulsed Avalanche Current e

IAS

1.5

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Symbol

RθJC

RθJA

Limit

2.4

50

Units

V

V

A

A

A

W

W/ C

mJ

A

C

Units

C/W

C/W

Details are subject to change without notice .

1

Rev 5. 2011.Feb

http://www.cetsemi.com

Share Link: