CEP75N06G Ver la hoja de datos (PDF) - Unspecified
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CEP75N06G Datasheet PDF : 5 Pages
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CEP75N06G
Electrical Characteristics：(TC=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
60
IDSS
IGSS
On Characteristics
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
VGS=0V,VDS=60V,(TC=25℃) ---
VGS=±25V, VDS=0A
---
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
2
RDS(ON)
Drain-Source On Resistance
VGS=10V,ID=40A
---
GFS
Forward Transconductance
VDS =10V, ID=15A
18
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
---
VDS=25V, VGS=0V, f=1MHz
---
Crss
Reverse Transfer Capacitance
---
Switching Characteristics
td(on)
tr
Turn-On Delay Time
Rise Time
---
VDS=30V,RL=2.5Ω
---
td(off)
tf
Turn-Off Delay Time
Fall Time
VGS=10V,RG=3Ω
---
---
Qg
Total Gate Charge
---
VGS=10V, VDS=30V,
Qgs
Gate-Source Charge
---
ID=15A
Qgd
Gate-Drain “Miller” Charge
---
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage1 TJ=25℃,ISD=1A,VGS=0V
---
Typ Max Units
---
---
V
---
1
μA
--- ±100 nA
---
4
V
11.5
15
mΩ
---
---
S
1717 ---
180
---
pF
140
---
15
---
ns
25
---
ns
50
---
ns
23
---
ns
50
---
nC
12
---
nC
23
---
nC
0.85 0.99
V
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