CEM8958 Ver la hoja de datos (PDF) - Unspecified

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CEM8958

P-Chanel and N-Channel MOSFET use advanced trench technology

Unspecified 

CEM 8958

Description：

This P-Chanel and N-Channel MOSFET use advanced trench technology

and design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) N-Channel: VDS=30V,ID=6.5A,RDS(ON)<30mΩ@VGS=10V

P-Channel: VDS=-30V,ID=-7A,RDS(ON)<33mΩ@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

S1

G1

S2

G2

Absolute Maximum Ratings：(TC=25℃ unless otherwise noted)

Symbol

VDS

VGS

ID

EAS

PD

TJ, TSTG

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Continuous Drain Current-TC=100℃

Pulsed Drain Current1

Single Pulse Avalanche Energy3

Power Dissipation4

Operating and Storage Junction Temperature

Range

N-Channel

30

±20

6.5

5.4

30

---

2

P-Channel

-30

±20

-7

-5.8

-30

---

2

-55 to +150

Thermal Characteristics：

Symbol

Parameter

Channel

Max

RƟJA

Thermal Resistance,Junction to Ambient2

N-Ch

62.5

RƟJA

Thermal Resistance,Junction to Ambient2

P-Ch

62.5

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—1—

D1

D1

D2

D2

Units

V

V

A

mJ

W

℃

Units

℃/W

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