HM100N03D Ver la hoja de datos (PDF) - Unspecified
Número de pieza
componentes Descripción
Fabricante
HM100N03D Datasheet PDF : 6 Pages
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HM100N03D
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
2.3
℃/W
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Symbol
Condition
Min Typ Max Unit
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=30V,VGS=0V
VGS=±20V,VDS=0V
30
35
-
V
-
-
1
μA
-
-
±100
nA
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=20A
VGS=4.5V, ID=10A
VDS=10V,ID=20A
1.2 1.7
2.5
V
-
1.9
2.5
mΩ
2.9
3.5
32
-
-
S
Clss
- 5000
-
PF
VDS=15V,VGS=0V,
Coss
- 1135
-
PF
F=1.0MHz
Crss
-
563
-
PF
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=15V, RL=15Ω
VGS=10V,RG=2.5Ω
VDS=15V,ID=20A,
VGS=10V
-
26
-
nS
-
24
-
nS
-
91
-
nS
-
39
-
nS
-
38
nC
-
9
nC
-
13
nC
VSD
VGS=0V,IS=10A
-
1.2
V
IS
-
-
100
A
trr
TJ = 25°C, IF = 20A
-
42
-
nS
Qrr
di/dt = 100A/μs(Note3)
-
39
-
nC
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
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