HM100N03D Ver la hoja de datos (PDF) - Unspecified

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Fabricante

HM100N03D

High density cell design for ultra low Rdson

Unspecified 

Description

The HM100N03D uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge. It

can be used in a wide variety of applications.

General Features

● VDS =30V,ID =100A

RDS(ON) <2.5 mΩ @ VGS=10V

RDS(ON) <3.5mΩ @ VGS=4.5V

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high EAS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply

HM100N03D

Schematic diagram

Marking and pin assignment

Package Marking and Ordering Information

Device Marking

HM100N03D

Device

HM100N03D

Device Package

DFN5X6-8L

Reel Size

-

Tape width

-

Quantity

-

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Drain-Source Voltage

Parameter

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Continuous(TC=100℃)

Pulsed Drain Current

Maximum Power Dissipation

Derating factor

Operating Junction and Storage Temperature Range

Symbol

VDS

VGS

ID

ID (100℃)

IDM

PD

TJ,TSTG

Limit

30

±20

100

70.7

300

65

0.43

-55 To 175

Unit

V

V

A

A

A

W

W/℃

℃

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