2SCR563F3TR Ver la hoja de datos (PDF) - ROHM Semiconductor
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2SCR563F3TR Datasheet PDF : 9 Pages
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2SCR563F3
Datasheet
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
Values
Unit
VCBO
50
V
VCEO
50
V
VEBO
6
V
IC
6
A
ICP*1
12
A
PD*2
1.0
W
PD*3
2.1
W
Tj
150
℃
Tstg
-55 to +150
℃
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Collector-base breakdown
voltage
BVCBO IC = 100μA
50 -
-
V
Collector-emitter breakdown
voltage
BVCEO IC = 1mA
50 -
-
V
Emitter-base breakdown voltage BVEBO IE = 100μA
6
-
-
V
Collector cut-off current
ICBO VCB = 50V
-
-
1 μA
Emitter cut-off current
IEBO VEB = 4V
-
-
1 μA
Collector-emitter saturation voltage VCE(sat)*4 IC = 3A, IB = 150mA
- 150 350 mV
DC current gain
hFE*4 VCE = 3V, IC = 500mA 180
-
450
-
Transition frequency
f T*4
VCE = 10V, IE = -500mA,
f = 100MHz
-
200
-
MHz
Output capacitance
Cob
VCB = 10V, IE = 0A,
f = 1MHz
-
40
-
pF
Turn-On time
Storage time
Fall time
ton IC = 3A,
IB1 = 300mA,
tstg
IB2 = -300mA,
VCC ⋍ 10V,
tf
RL = 3.3Ω
See test circuit
-
45
-
ns
- 500 -
ns
- 100 -
ns
*1 Pw=10ms Single Pulse
*2 Mounted on FR4 board(25.4×25.4×1.6mm, Cu PAD：645mm2).
*3 Pw=10ms
Mounted on FR4 board(25.4×25.4×1.6mm, Cu PAD：645mm2).
*4 Pulsed
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20200722 - Rev.001
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