PN5134(1997) Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
PN5134 Datasheet PDF : 2 Pages
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PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
V(BR)CBO
V(BR)EBO
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
V(BR)CES
ICBO
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
ICES
Collector Cutoff Current
IC = 10 mA, IB = 0
IC = 10 µA, IE = 0
IE = 10 µA, IC = 0
IC = 10 µA
VCB = 15 V, IE = 0, TA = 65 °C
VCE = 15 V, IC = 0
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
VCE = 1.0 V, IC = 10 mA
VCE = 0.4 V, IC = 30 mA
IC = 10 mA, IB = 1.0 mA
IC = 10 mA, IB = 3.3 mA
IC = 10 mA, IB = 1.0 mA
IC = 10 mA, IB = 3.3 mA
SMALL SIGNAL CHARACTERISTICS
Cob
Output Capacitance
hfe
Small-Signal Current Gain
VCB = 5.0 V, f = 1.0 MHz
IC = 10 mA, VCE = 10 V,
f = 100 MHz
SWITCHING CHARACTERISTICS
ts
Storage Time
ton
Turn-on Time
td
Delay Time
tr
Rise Time
toff
Turn-off Time
ts
Storage Time
tf
Fall Time
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
IC = IB1 = IB2 = 10 mA
VCC = 3.0 V, IC = 10 mA,
IB1 = 3.3 mA
VCC = 3.0V, IC = 10 mA
IB1 = IB2 = 3.3 mA
10
V
20
V
3.5
V
20
V
10
µA
0.4
µA
20
150
15
0.25
V
0.20
V
0.70
0.9
V
0.72
1.1
V
4.0
pF
2.5
18
ns
18
ns
14
ns
12
ns
18
ns
13
ns
13
ns
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