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Número de pieza
componentes Descripción
3SK318 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
3SK318
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
Hitachi -> Renesas Electronics
3SK318 Datasheet PDF : 9 Pages
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3SK318
Silicon N-Channel Dual Gate MOS FET
UHF RF Amplifier
Features
•
Low noise characteristics;
(NF= 1.4 dB typ. at f= 900 MHz)
•
Excellent cross modulation characteristics
•
Capable low voltage operation; +B= 5V
Outline
Note: Marking is “YB–”.
CMPAK-4
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3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
ADE-208-600(Z)
1st. Edition
February 1998
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