HMC341 Ver la hoja de datos (PDF) - Analog Devices

Número de pieza

componentes Descripción

Fabricante

HMC341

GaAs MMIC LOW NOISE AMPLIFIER, 24 - 30 GHz

Analog Devices 

v01.1007

Absolute Maximum Ratings

Drain Bias Voltage (Vdd)

+5.5 Vdc

RF Input Power (RFIN)(Vdd = +3.0 Vdc) +3 dBm

Channel Temperature

175 °C

Continuous Pdiss (T = 85 °C)

(derate 3.44 mW/°C above 85 °C)

0.310 W

Thermal Resistance

(channel to die bottom)

290 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-55 to +85 °C

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Outline Drawing

HMC341

GaAs MMIC LOW NOISE

AMPLIFIER, 24 - 30 GHz

1

Die Packaging Information [1]

Standard

Alternate

GP-2 (Gel Pack)

[2]

[1] Refer to the “Packaging Information” section for die

packaging dimensions.

[2] For alternate packaging information contact Hittite

Microwave Corporation.

NOTES:

1. ALL DIMENSIONS ARE IN INCHES [MM]

2. DIE THICKNESS IS .004”

3. TYPICAL BOND IS .004” SQUARE

4. BACKSIDE METALLIZATION: GOLD

5. BOND PAD METALLIZATION: GOLD

6. BACKSIDE METAL IS GROUND.

7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.

IrrliniecgfseohpntrsFomsenoaosftiisirbtohingilprirtdyafrunpiirstcnaeairdsetsihesb,esuydmdthimebaedtyplmlbiiAcvyaanPyeAtaiorlhnroenaygsoluoonlDargt eofenDrvtohe:idmcev9ericwistt7esoissi8usefspo-beur2.neliadtSl5iseepcvur0eeseca-deinf,3iyoctno3aoprtrdia4boftenoee3srnartascsnoucyrb:ujipernHFaacfrtttaeiienttnogxtatiecn:rtmhdieg9aehnrn7teMgstls8eiaooibwf-cfl2Aieptrhn.5aooatHue0lwotong-wntas3oDeotvvi3ecreeveo7ri,.cth3eNCnesoor.orpFOPOoohnrroredanpTeetreii:rocc7enhO8,n,1nod-23le-o02llgii9vnyAe-e4rWly7pa,a0hyta0,anw•PdR.OwOtoor.wdBaep.dohrlaxo,ictn9Cetl1iitn0hoee6re.d,caleNmtorwosms:rwwfAowonro.daadln,o,agMMloADAge.0cv02oic10me68s22,-49In10c.6,

Trademarks and registered trademarks arAe tphepplriocpearttyioofntheSir urespppecotivret:owPnehrso. ne: 978-250-3A3p4p3licaotrionaSpuppsp@orht:iPtthitoen.ec: o1-m800-ANALOG-D

1 - 11

Share Link: