2729-170 Ver la hoja de datos (PDF) - Microsemi Corporation
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2729-170 Datasheet PDF : 4 Pages
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2729-170R4
2729-170
170 Watts, 38 Volts, 100µs, 10%
Radar 2700-2900 MHz
GENERAL DESCRIPTION
The 2729-170 is an internally matched, COMMON BASE bipolar transistor
capable of providing 170 Watts of pulsed RF output power at 100µs pulse
width, 10% duty factor across the 2700 to 2900 MHz band. The transistor
prematch and test fixture has been optimized through the use of Pulsed
Automated Load Pull. This hermetically solder-sealed transistor is specifically
designed for S-band radar applications. It utilizes gold metallization and emitter
ballasting to provide high reliability and supreme ruggedness.
CASE OUTLINE
55KS-1
Common Base
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25°C1
570 W
Maximum Voltage and Current
Collector to Base Voltage (BVces)
Emitter to Base Voltage (BVebo)
Collector Current (Ic)
Maximum Temperatures
65 V
3.0 V
17 A
Storage Temperature
-65 to +200 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
TEST CONDITIONS
Pout
Pin
Pg
ηc
VSWR
Power Output
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance1
F=2700-2900 MHz
Vcc = 38 Volts
Pulse Width = 100 µs
Duty Factor = 10%
F = 2900 MHz, Po = 170 W
FUNCTIONAL CHARACTERISTICS @ 25°C
BVebo
Iebo
BVces
Ices
hFE
θjc1
Emitter to Base Breakdown
Emitter to Base Leakage
Collector to Emitter Breakdown
Collector to Emitter Leakage
DC – Current Gain
Thermal Resistance
Ie = 30 mA
Veb = 1.5 V
Ic = 120 mA
Vce = 36 V
Vce = 5V, Ic = 600 mA
NOTE: 1. At rated output power and pulse conditions
MIN
170
8.2
52
TYP
8.6
60
MAX
25.7
2:1
UNITS
W
W
dB
%
3.0
V
2
mA
56 65
V
7
mA
18 50
0.30 °C/W
Issue April 2005
MICROSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE
CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY.
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