LL4154-M Ver la hoja de datos (PDF) - Vishay Semiconductors
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LL4154-M Datasheet PDF : 4 Pages
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LL4154-M
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Reverse recovery time
IF = 30 mA
VF
VR = 25 V
IR
VR = 25 V, Tj = 150 °C
IR
IR = 5 μA, tp/T = 0.01,
tp = 0.3 ms
V(BR)
35
VR = 0, f = 1 MHz,
VHF = 50 mV
CD
IF = IR = 10 mA,
iR = 1 mA
trr
IF = 10 mA, VR = 6 V,
iR = 0.1 x IR, RL = 100 Ω
trr
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
MAX.
1
100
100
4
4
2
UNIT
V
nA
μA
V
pF
ns
ns
100
Scattering Limit
10
1
0.1
0.01
0
94 9154
VR = 25 V
40
80 120 160 200
Tj - Junction Temperature (°C)
Fig. 1 - Reverse Current vs. Junction Temperature
3.0
2.5
f = 1 MHz
2.0
Tj = 25 °C
1.5
1.0
0.5
0
0.1
1
10
100
94 9156
VR - Reverse Voltage (V)
Fig. 3 - Diode Capacitance vs. Reverse Voltage
1000
100
Tj = 100 °C
10
Tj = 25 °C
1
0.1
0
94 9152
0.4 0.8 1.2 1.6 2.0
VF - Forward Voltage (V)
Fig. 2 - Forward Current vs. Forward Voltage
Rev. 1.2, 25-Feb-2020
2
Document Number: 85907
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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