3SK264(2013) Ver la hoja de datos (PDF) - ON Semiconductor
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Fabricante
3SK264 Datasheet PDF : 6 Pages
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Ordering number : EN4901A
3SK264
N-Channnel Dual Gate MOSFET
15V,30mA,PG=23dB,NF=1.1dB, CP4
http://onsemi.com
Features
• Enhancement type
• Easy AGC (Cut off at VG2S=0V)
• Small noise figure
• Excels in cross modulation characteristics
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate1-to-Source Voltage
Gate2-to-Source Voltage
Drain Current
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDS
VG1S
VG2S
ID
PD
Tch
Tstg
Conditions
Ratings
Unit
15
V
±8
V
±8
V
30 mA
200 mW
125
°C
--55 to +125
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7014A-006
2.9
0.4
4
3
3SK264-5-TG-E
0.1
Product & Package Information
• Package
: CP4
• JEITA, JEDEC
: SC-61, SC-82AB, SOT-143, SOT-343
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TG
Marking
1
2
0.6
0.95 0.85
1 : Drain
2 : Source
3 : Gate1
4 : Gate2
CP4
SJ
TG
Electrical Connection
1
3
4
2
Semiconductor Components Industries, LLC, 2013
August, 2013
90512 TKIM/82599TH (KT)/32295TS (KOTO) BX-1489 No.4901-1/6
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