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PXTA42

NPN high-voltage transistor

Philips Electronics 

Philips Semiconductors

NPN high-voltage transistor

Product specification

PXTA42

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

Rth j-s

thermal resistance from junction to ambient

note 1

thermal resistance from junction to soldering point

96

K/W

16

K/W

Note

1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.

For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

ICBO

IEBO

hFE

VCEsat

VBEsat

Cre

fT

collector cut-off current

IE = 0; VCB = 200 V

−

emitter cut-off current

IC = 0; VBE = 6 V

−

DC current gain

IC = 1 mA; VCE = 10 V

25

IC = 10 mA; VCE = 10 V

40

IC = 30 mA; VCE = 10 V

40

collector-emitter saturation voltage IC = 20 mA; IB = 2 mA

−

base-emitter saturation voltage

IC = 20 mA; IB = 2 mA

−

feedback capacitance

IC = ic = 0; VCB = 20 V; f = 1 MHz −

transition frequency

IC = 10 mA; VCE = 20 V;

50

f = 100 MHz

MAX.

100

100

−

−

−

500

900

3

−

UNIT

nA

nA

mV

mV

pF

MHz

1999 Apr 26

3

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