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PMST3906 Datasheet PDF : 10 Pages
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NXP Semiconductors
PMST3906
40 V, 200 mA PNP switching transistor
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
collector-base cut-off IE = 0 A; VCB = −30 V
current
IEBO
emitter-base cut-off IC = 0 A; VEB = −6 V
current
hFE
VCEsat
VBEsat
td
tr
ton
ts
tf
toff
Cc
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
delay time
rise time
turn-on time
VCE = −1 V
IC = −0.1 mA
IC = −1 mA
IC = −10 mA
IC = −50 mA
IC = −100 mA
IC = −10 mA; IB = −1 mA
IC = −50 mA; IB = −5 mA
IC = −10 mA; IB = −1 mA
IC = −50 mA; IB = −5 mA
IC = −10 mA;
IBon = −1 mA;
IBoff = 1 mA
storage time
fall time
turn-off time
collector capacitance IE = ie = 0 A; VCB = −5 V;
f = 1 MHz
Ce
emitter capacitance IC = ic = 0 A;
VEB = −500 mV;
f = 1 MHz
fT
transition frequency IC = −10 mA;
VCE = −20 V;
f = 100 MHz
NF
noise figure
IC = −100 µA;
VCE = −5 V; RS = 1 kΩ;
f = 10 Hz to 15.7 kHz
Min Typ Max Unit
-
-
−50 nA
-
-
−50 nA
60
-
80
-
100 -
60
-
30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
250 -
-
-
-
-
300
-
-
−250 mV
−400 mV
−850 mV
−950 mV
35
ns
35
ns
70
ns
225 ns
75
ns
300 ns
4.5 pF
10
pF
-
MHz
4
dB
PMST3906_5
Product data sheet
Rev. 05 — 29 April 2009
© NXP B.V. 2009. All rights reserved.
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