PMBT5551 Ver la hoja de datos (PDF) - Nexperia B.V. All rights reserved
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PMBT5551 Datasheet PDF : 8 Pages
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Nexperia
PMBT5551
NPN high-voltage transistor
7. Marking
Table 4. Marking codes
Type number
PMBT5551
[1] % = placeholder for manufacturing site code
Marking code[1]
%G1
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tj
Tamb
Tstg
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
open emitter
open base
open collector
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
Min
-
-
-
-
-
-
[1]
-
-
-65
-65
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Max
180
160
6
300
600
100
250
150
150
150
Unit
V
V
V
mA
mA
mA
mW
°C
°C
°C
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance from in free air
[1]
junction to ambient
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Min Typ Max Unit
-
-
500 K/W
PMBT5551
Product data sheet
All information provided in this document is subject to legal disclaimers.
31 August 2020
© Nexperia B.V. 2020. All rights reserved
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