PUMH4 Ver la hoja de datos (PDF) - NXP Semiconductors.
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PUMH4 Datasheet PDF : 8 Pages
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NXP Semiconductors
NPN/NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = open
Product data sheet
PEMH4; PUMH4
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Per transistor
Rth(j-a)
thermal resistance from junction to ambient
SOT363
SOT666
Per device
Rth(j-a)
thermal resistance from junction to ambient
SOT363
SOT666
CONDITIONS
Tamb ≤ 25 °C
note 1
notes 1 and 2
Tamb ≤ 25 °C
note 1
notes 1 and 2
VALUE
625
625
416
416
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
UNIT
K/W
K/W
K/W
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Per transistor
ICBO
ICEO
IEBO
hFE
VCEsat
R1
Cc
collector-base cut-off current
VCB = 50 V; IE = 0
−
−
collector-emitter cut-off current
VCE = 30 V; IB = 0
−
−
VCE = 30 V; IB = 0; Tj = 150 °C −
−
emitter-base cut-off current
VEB = 5 V; IC = 0
−
−
DC current gain
VCE = 5 V; IC = 1 mA
200 −
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA
−
−
input resistor
7
10
collector capacitance
VCB = 10 V; IE = ie = 0; f = 1 MHz −
−
100 nA
1
μA
50
μA
100 nA
−
150 mV
13
kΩ
2.5 pF
2004 Apr 14
4
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