PEMH4 Ver la hoja de datos (PDF) - Philips Electronics
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Fabricante
PEMH4 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN resistor-equipped double transistor
R1 = 10 kΩ, R2 = open
Preliminary specification
PEMH4
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
Per transistor
ICBO
ICEO
IEBO
hFE
VCEsat
R1
Cc
collector cut-off current
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
input resistor
collector capacitance
IE = 0; VCB = 50 V
IB = 0; VCE = 50 V
IB = 0; VCE = 30 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 1 mA; VCE = 5 V
IC = 5 mA; IB = 0.25 mA
IE = ie = 0; VCB = 10 V; f = 1 MHz
MIN. TYP. MAX. UNIT
−
−
−
−
−
−
−
−
200 −
−
−
7
10
−
−
100 nA
1
µA
50 µA
100 µA
−
150 mV
13 kΩ
2.5 pF
600
handbook, halfpage
(1)
hFE
400
(2)
(3)
200
MGM902
10−1
handbook, halfpage
VCEsat
(V)
MGM901
(1)
(2)
(3)
0
10−1
1
10
102
IC (mA)
VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = 40 °C.
Fig.3 DC current gain as a function of collector
current; typical values.
10−2
10−1
1
10
102
IC (mA)
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = 40 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
2001 Sep 14
4
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