PN4391 Ver la hoja de datos (PDF) - Philips Electronics
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PN4391 Datasheet PDF : 6 Pages
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Philips Semiconductors
N-channel silicon field-effect transistors
Product specification
PN4391 to 4393
THERMAL RESISTANCE
From junction to ambient in free air
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Reverse gate current
−VGS = 20 V; VDS = 0
−VGS = 20 V; VDS = 0
Tamb = 100 °C
Drain cut-off current
−VGS = 12 V
−VGS = 7 V
−VGS = 5 V
VDS = 20 V
−VGS = 12 V
−VGS = 7 V
−VGS = 5 V
VDS = 20 V;
Tamb = 100 °C
Drain saturation current
VDS = 20 V; VGS = 0
Gate-source breakdown voltage
−IG = 1 µA; VDS = 0
Gate-source cut-off voltage
VDS = 20 V; ID = 1 nA
Drain-source on-resistance
ID = 1 mA; VGS = 0
Drain-source on-voltage
VGS = 0; ID = 12 mA
VGS = 0; ID = 6 mA
VGS = 0; ID = 3 mA
Rth j-a
=
350
K/W
PN4391 PN4392 PN4393
−IGSS
−IGSS
IDSX
IDSX
IDSX
IDSX
IDSX
IDSX
IDSS
max.
max.
max.
max.
max.
max.
max.
max.
min.
max.
1.0
1.0
1.0 nA
200
200
200 nA
1.0
nA
1.0
nA
1.0 nA
200
nA
200
nA
200 nA
50
25
150
100
5 mA
60 mA
−V(BR)GSS
−VGS off
min.
min.
max.
40
40
40 V
4.0
2.0
0.5 V
10
5.0
3.0 V
RDS on
VDS on
VDS on
VDS on
max.
max.
max.
max.
30
60
100 Ω
0.4
V
0.4
V
0.4 V
April 1989
3
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