UPA826TF Ver la hoja de datos (PDF) - NEC => Renesas Technology
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UPA826TF Datasheet PDF : 12 Pages
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PRELIMINARY DATA SHEET
SILICON TRANSISTOR
PPA826TF
HIGH-FREQUENCY LOW-NOISE AMPLIFIER
NPN SILICON EPITAXIAL TWIN TRANSISTOR
(WITH BUILT-IN 6-PIN 2 u 2SC4959) THIN -TYPE SMALL MINI MOLD
FEATURES
• Low noise and high gain
• Operable at low voltage
• Small feedback capacitance
Cre = 0.4 pF TYP.
• Built-in 2 transistors (2 u 2SC4959)
• 6-pin thin-type small mini mold package adopted
ORDERING INFORMATION
PACKAGE DRAWINGS (Unit: mm)
2.10±0.1
1.25±0.1
Part Number
PPA826TF
PPA826TF-T1
Quantity
Loose products
(50 pcs)
Taping
products
(3 kpcs/reel)
Packing Style
Embossed tape 8 mm wide.
Pin 6 (Q1 Base),
Pin 5 (Q2 Emitter),
Pin 4 (Q2 Base) face to perfora-
tion side of the tape.
Remark If you require an evaluation sample, please contact
an NEC Sales Representative (unit sample quantity
is 50 pcs).
PIN CONFIGURATION (Top View)
ABSOLUTE MAXIMUM RATINGS (TA = 25qC)
B1 E2 B2
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
VCBO
9
V
Collector to Emitter Voltage
VCEO
6
V
Emitter to Base Voltage
VEBO
2
V
Collector Current
IC
30
mA
Total Power Dissipation
PT
150 in 1 element
mW
200 in 2 elementsNote
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
ð65 to 150
°C
Note 110 mW must not be exceeded for 1 element.
6
54
Q1
Q2
1
2
3
C1 E1 C2
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
Caution is required concerning excess input, such as from static electricity, due to the high-precision
fabrication processes used for this device.
The information in this document is subject to change without notice.
Document No. P12691EJ1V0DS00 (1st edition)
Date Published July 1997 N
©
Printed in Japan
1997
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