VTP1188S Ver la hoja de datos (PDF) - PerkinElmer Inc
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VTP1188S Datasheet PDF : 1 Pages
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VTP Process Photodiodes
VTP1188S
PACKAGE DIMENSIONS inch (mm)
CASE 12 LENSED CERAMIC
CHIP ACTIVE AREA: .017 in2 (1.1 mm2)
PRODUCT DESCRIPTION
Large area planar silicon photodiode mounted
on a two lead ceramic substrate. A clear molded
lens is used to increase sensitivity. Low junction
capacitance permits fast response time.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-20°C to 75°C
-20°C to 75°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46)
SYMBOL
CHARACTERISTIC
ISC
TC ISC
ISC
VOC
TC VOC
ID
RSH
TC RSH
CJ
λrange
λp
SR
Short Circuit Current
ISC Temperature Coefficient
Short Circuit Current
Open Circuit Voltage
VOC Temperature Coefficient
Dark Current
Shunt Resistance
RSH Temperature Coefficient
Junction Capacitance
Spectral Application Range
Spectral Response - Peak
Sensitivity
TEST CONDITIONS
H = 100 fc, 2850 K
2850 K
100 µW/cm2, 880 nm
H = 100 fc, 2850 K
2850 K
H = 0, VR = 10 mV
H = 0, V = 10 mV
H = 0, V = 10 mV
H = 0, V =0 V
@ Peak
VTP11188S
Min.
Typ.
Max.
200
.20
13
25
.33
-2.0
3
30
67
-11
.18
.30
400
1100
925
.55
UNITS
µA
%/°C
µA
mV
mV/°C
nA
GΩ
%/°C
nF
nm
nm
A/W
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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