DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

ZXCT1012ET5TA Ver la hoja de datos (PDF) - Diodes Incorporated.

Número de pieza
componentes Descripción
Fabricante
ZXCT1012ET5TA
Diodes
Diodes Incorporated. Diodes
ZXCT1012ET5TA Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
ZXCT1012
Power dissipation
The maximum allowable power dissipation of the device for normal operation (PMAX), is a
function of the package junction to ambient thermal resistance (JA), maximum junction
temperature (TJMAX), and ambient temperature (Tamb), according to the expression:
PMAX = (TJMAX – Tamb) / JA
The device power dissipation, PD is given by the expression:
PD=IOUT.(VIN-VOUT) watts
Care must be taken when using this device at large input voltages and large sense voltages to
prevent too much power dissipation.
600
500
400
300
200
100
0
0
Power Dissipation
TDFN3x3-5
TSOT23-5
25
50
75 100 125 150
TA - Ambient temperature (°C)
VIN
ROUT
IOUT
VOUT
PD
= 20V
= 100
VSENSE = 2.5V
= 2.5 x 0.01
= 25mA
= IOUT x ROUT
= 25mA x 100
= 2.5V
= 25mA (20 - 2.5)V
= 438mW
Issue 1 - December 2006
7
© Zetex Semiconductors plc 2006
www.zetex.com

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]