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STTA312B Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
STTA312B Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Fig. 1: Conductionlosses versus average current.
P1(W)
8
7
6
5
4
3
2
1
0
0.0 0.5
δ = 0.1
δ = 0.2
IF(av) (A)
1.0 1.5 2.0
δ = 0.5
δ=1
2.5 3.0 3.5
STTA312B
Fig. 2: Forward voltage drop versus forward cur-
rent (maximum values).
IFM(A)
3E+1
1E+1
1E+0
Tj=125°C
1E-1
Tj=25°C
VFM(V)
1E-2
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Fig. 3: Relative variation of thermal impedance Fig. 4: Peak reverse recovery current versus dIF/dt
junction to case versus pulse duration.
(90% confidence).
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.4
0.2
δ = 0.2
δ = 0.1
Single pulse
0.0
1E-3
1E-2
tp(s)
T
δ=tp/T
1E-1
tp
1E+0
IRM(A)
14
VR=600V
12
Tj=125°C
10
IF=2*IF(av)
8
IF=IF(av)
6
4
2
dIF/dt(A/µs)
0
0 10 20 30 40 50 60 70 80 90 100
Fig. 5: Reverse recovery time versus dIF/dt (90%
confidence).
Fig. 6: Softness factor tb/ta versus dIF/dt (typical
values).
trr(ns)
600
500
VR=600V
Tj=125°C
400
300
IF=2*IF(av)
200
100
0
IF=IF(av)
dIF/dt(A/µs)
10 20 30 40 50 60 70 80 90 100
S factor
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0
IF<2*IF(av)
VR=600V
Tj=125°C
dIF/dt(A/µs)
10 20 30 40 50 60 70 80 90 100
3/8

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