DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

STTA3006CW Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
STTA3006CW
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STTA3006CW Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
STTA3006CW/CP
Fig. 1: Conduction losses versus average current.
Fig. 2: Forward voltage drop versus forward
current (maximum values).
P1(W)
25
20
15
δ = 0.1 δ = 0.2
δ = 0.5
δ= 1
10
T
5
IF(av) (A)
δ=tp/T
tp
0
0 2 4 6 8 10 12 14 16 18
VFM(V)
200
100 Tj=125°C
10
IFM(A)
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Fig. 3: Relative variation of thermal transient Fig. 4: Peak reverse recovery current versus
impedance junction to case versus pulse duration.
dIF/dt (90% confidence).
K
1.0
Zth(j-c) (tp, δ)
K=
Rth(j-c)
0.8
0.6 δ = 0.5
0.4
δ = 0.2
0.2 δ = 0.1
0.0
1E-4
Single pulse
1E-3
tp(s)
1E-2
T
δ=tp/T
1E-1
tp
1E+0
IRM(A)
45
40
VR=400V
35
Tj=125°C
IF=2*IF(av)
30
IF=IF(av)
25
20
IF=0.5*IF(av)
15
10
5
dIF/dt(A/µs)
0
0 100 200 300 400 500 600 700 800 900 1000
Fig. 5: Reverse recovery time versus dIF/dt (90%
confidence).
trr(ns)
200
180
160
140
120
100
80
60
IF=0.5*IF(av)
40
20
0
0 100 200
IF=2*IF(av)
IF=IF(av)
dIF/dt(A/µs)
300 400 500 600 700
VR=400V
Tj=125°C
800 900 1000
Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical
values).
S factor
1.0
0.8
IF<2*IF(av)
VR=400V
Tj=125°C
0.6
0.4
0.2
0.0
0
dIF/dt(A/µs)
100 200 300 400 500 600 700 800 900 1000
3/8

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]