SD803C04S10C(2018) Ver la hoja de datos (PDF) - Vishay Semiconductors
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SD803C04S10C Datasheet PDF : 8 Pages
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VS-SD803C..C Series
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at heatsink temperature
Maximum RMS forward current
SYMBOL
IF(AV)
IF(RMS)
Maximum peak, one-cycle forward,
non-repetitive current
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Low level of threshold voltage
High level of threshold voltage
Low level of forward slope resistance
High level of forward slope resistance
Maximum forward voltage drop
I2t
VF(TO)1
VF(TO)2
rf1
rf2
VFM
TEST CONDITIONS
180° conduction, half sine wave
Double side (single side) cooled
25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
No voltage
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
(I > x IF(AV)), TJ = TJ maximum
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
(I > x IF(AV)), TJ = TJ maximum
Ipk = 2655 A, TJ = TJ maximum tp = 10 ms sinusoidal wave
VALUES
845 (420)
55 (75)
1326
11 295
11 830
9500
9945
640
583
451
412
6400
1.02
1.32
0.38
0.28
1.89
UNITS
A
°C
A
kA2s
kA2s
V
mW
V
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT TJ = 25 °C
TEST CONDITIONS
TYPICAL VALUES
AT TJ = 125 °C
CODE
Ipk
trr AT 25 % IRRM
SQUARE dI/dt
Vr
trr AT 25 % IRRM
Qrr
Irr
(μs)
PULSE (A/μs) (V)
(μs)
(μC)
(A)
(A)
S10
1.0
2.0
45
34
1000
50
-30
S15
1.5
3.2
87
51
IFM
trr
t
dir
dt
Qrr
IRM(REC)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum operating temperature range
Maximum storage temperature range
Maximum thermal resistance,
case junction to heatsink
TJ
TStg
RthJ-hs
DC operation single side cooled
DC operation double side cooled
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES
-40 to 125
-40 to 125
0.076
0.038
9800 (1000)
83
B-43
UNITS
°C
K/W
N (kg)
g
RthJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
SINGLE SIDE DOUBLE SIDE
RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE
TEST CONDITIONS
UNITS
180°
120°
90°
60°
30°
0.006
0.008
0.010
0.015
0.026
0.007
0.008
0.010
0.015
0.026
0.005
0.008
0.011
0.016
0.026
0.005
0.008
0.011
0.016
0.026
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Revision: 11-Jan-18
2
Document Number: 93180
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