SD853C30S50K(2018) Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
SD853C30S50K Datasheet PDF : 8 Pages
| |||
www.vishay.com
10.5
10
9.5
9
8.5
8
7.5
7
6.5
6
5.5
5
4.5
4
10
SD853C..S50K Series
TJ= 125 °C; Vr > 100V
IFM = 1500 A
Sine Pulse
1000 A
500 A
100
1000
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 12 - Recovery Time Characteristics
2200
2000
1800
1600
1400
IFM = 1500 A
Sine Pulse
1000 A
500 A
1200
1000
800
600
400
SD853C..S50K Series
TJ= 125 °C; Vr > 100V
200
0
0 50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 13 - Recovery Charge Characteristics
VS-SD853C..S50K Series
Vishay Semiconductors
1E4
10 joules p er pulse
6
4
2
1
0.8
1E3
0.6
0.4
0.2
1E2
1E1
SD853C..S50K Series
Sinusoid al Pulse
TJ= 125°C, VRRM = 1500V
tp
d v/ d t = 1000V/ µs
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 15 - Maximum Total Energy Loss
Per Pulse Characteristics
1E4
1E3
1000 600 400 200 100 50 Hz
1500
2000
3000
4000
6000
10000
SD853C..S50K Series
Sinusoidal Pulse
TC= 55°C, VRRM= 1500V
tp
dv/ dt = 1000V/ us
1E2
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 16 - Frequency Characteristics
800
700
IFM = 1500 A
Sine Pulse
600
1000 A
500 A
500
400
300
200
SD853C..S50K Series
100
TJ = 125 °C; Vr > 100V
0
0 50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/d t (A/µs)
Fig. 14 - Recovery Current Characteristics
1E4
tp
1E3
SD853C..S50K Series
Trapezoidal Pulse
TJ = 125°C, VRRM = 1500V
d v/ d t = 1000V/ µs
d i/ d t = 300A/ µs
10 joules per pulse
8
6
4
2
1
0.8
0.6
0.4
1E2
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 17 - Maximum Total Energy Loss
Per Pulse Characteristics
Revision: 11-Jan-18
5
Document Number: 93182
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Share Link: 