SD853C30S50K(2018) Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
SD853C30S50K Datasheet PDF : 8 Pages
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VS-SD853C..S50K Series
Vishay Semiconductors
18000
At Any Rated Load Condition And With
16000
50% Ra t ed
VRRM Applied Following Surge
Initial TJ= 125 °C
14000
@60 Hz 0.0083 s
@50 Hz 0.0100 s
12000
10000
8000
6000
SD853C..S50K Series
4000
1
10
100
Number Of Equa l Amplitude Half Cyc le Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
TJ = 25°C
1000
TJ= 125°C
SD853C..S50K Series
100
123456789
InstantaneousForward Voltage (V)
Fig. 9 - Forward Voltage Drop Characteristics
20000
18000
16000
14000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial TJ= 125°C
No Voltage Reapplied
50%Rated VRRM Reapplied
12000
10000
8000
6000 SD853C..S50K Series
4000
0.01
0.1
1
Pulse Train Duration (s)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
0.1
SD853C..S50K Series
0.01
0.001
0.0001
0.001 0.01
Steady State Value
RthJ-hs = 0.04 K/ W
(Single Side Cooled)
RthJ-hs = 0.02 K/ W
(Double Side Cooled)
(DC Operation)
0.1
1
10 100
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
300
250
VFP
I
200
TJ = 125°C
150
TJ = 25°C
100
50
SD853C..S50K Series
0
0
200 400 600 800 1000 1200 1400 1600 1800 2000
Rate Of Rise Of Forward Current - di/ dt (A/ us)
Fig. 11 - Typical Forward Recovery Characteristics
Revision: 11-Jan-18
4
Document Number: 93182
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