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RMLA3565-58 Ver la hoja de datos (PDF) - Raytheon Company

Número de pieza
componentes Descripción
Fabricante
RMLA3565-58
Raytheon
Raytheon Company Raytheon
RMLA3565-58 Datasheet PDF : 4 Pages
1 2 3 4
RMLA3565-58
RF Components Wideband Low Noise MMIC Amplifier
PRODUCT INFORMATION
Application
Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE
The following briefly describes a procedure for evaluating the high efficiency PHEMT amplifier
packaged in a surface mount package. It may be noted that the chip is a fully monolithic single ended
two stage amplifier for 3.5 to 6.5 GHz applications. Figure 1 shows the functional block diagram of the
packaged product.
Test Fixture
Figure 2 shows the outline and pin-out descriptions for the packaged device. A typical test fixture
schematic showing external bias components is shown in Figure 3. Figure 4 shows typical layout of
an evaluation board corresponding to the schematic diagram. Typical performance of the test fixture
is shown in the performance data section. The following should be noted:
(1) Package pin designations are shown in figure 2.
(2) Vd is the drain voltage (positive) applied at the pins of the package.
(3) Vdd is the positive supply voltage at the evaluation board terminal.
Figure 1
Functional Block
Diagram
Ground Ground
Pin# 5 Pin# 1,3,4,6,9,10,11,13
Ground
Pin# 7
RF IN
Pin# 8
RF OUT
Pin# 2
Figure 2
Package Outline
Dimensions
Dimensions in inches
TOP VIEW
0.200 SQ.
654
Vd
Pin# 12
BOTTOM VIEW
456
7
8
0.030
9
3
2
1
3
0.015 2
1
10 1112
PLASTIC LID
0.010
0.230
0.246
0.282
12 11 10
0.069 MAX.
SIDE SECTION
7
8
9
0.041
Pin#
1
2
3
4
5
6
7
8
9
10
11
12
13
Description
GND
RF Out
GND
GND
GND
GND
GND
RF In
GND
GND
GND
Vd
GND
(Package Base)
www.raytheonrf.com
Specifications are based on most current or latest revision.
Revised February 6, 2003
Page 2
Raytheon RF Components
362 Lowell Street
Andover, MA 01810

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