RMPA2451B-58 Ver la hoja de datos (PDF) - Raytheon Company

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RMPA2451B-58

2.4-2.5 GHz GaAs MMIC Power Amplifier

Raytheon Company 

Description

RMPA2451B-58

2.4-2.5 GHz GaAs MMIC

Power Amplifier

PRODUCT INFORMATION

Raytheon RMPA2451B-58 is a partially matched monolithic power amplifier in a surface mount package for use in

wireless applications in the 2.4 to 2.5 GHz ISM frequency band. The amplifier may be biased for linear, class AB or

class F for high efficiency applications. External matching components are required to optimize the RF

performance. The MMIC chip design utilizes Raytheon’s 0.25µm power PHEMT process.

Features

38% Power Added Efficiency

29 dBm Typical Output Power

Small package outline: 0.28” x 0.28” x 0.07

Absolute

Maximum

Ratings

Parameter

Positive Drain DC Voltage

Negative Gate DC Voltage

Simultaneous Drain to Gate Voltage

RF Input Power (from 50 Ω source)

Drain Current, First Stage

Drain Current, Second Stage

Gate Current

Channel Temperature

Operating Case Temperature

Storage Temperature Range

Thermal Resistance (Channel to Case)

Symbol

Vd1,Vd2

Vg1,Vg2

Vd-Vg

Pin

Id1

Id2

Ig

Tc

Tcase

Tstg

Rjc

Value

+8

-5

+10

+10

75

525

5

175

-40 to 85

-40 to 125

33

Units

Volts

Volts

Volts

dBm

mA

mA

mA

°C

°C

°C

°C/Watt

Electrical

Characteristics1 Parameter

Min Typ Max Unit Parameter

Min Typ Max Unit

Frequency Range

2400 2450 2500 MHz 3rd order Intermod.

Gain2

28.5 33

dB

Product3

-35 -27 dBc

Output Power, P1dB2

27 29

dBm Drain Current (Id1 & Id2)

430

mA

Associated Power Added

Gate Current (Ig1 + Ig2)

5 mA

Efficiency

38

% Input Return Loss (50Ω)

-15

dB

www.raytheonrf.com

Notes:

1. Notes 4, 5. At 25°C using Raytheon Test Boards.

2. Production Testing includes Gain, Output Power at 1-dB gain compression (P1dB) and Input Return Loss at Vd1 = Vd2 = +5.0V;

Vg1,Vg2 = -0.5V (nominal), adjust Vg1 and Vg2 to get Idq1 = 60 mA, Idq2 = 340 mA and at F = 2.45 GHz.

3. Two tone 3rd order Output Intermodulation products (IM3) are measured with total output power level of +25 dBm.

Other Parameters are guaranteed by Design Validation Testing (DVT).

Characteristic performance data and specifications are subject to change without notice.

Revised December 7, 2001

Page 1

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

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