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QJD1210006 Datasheet PDF : 4 Pages
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QJD1210006
Silicon Carbide MOSFET Module
100 Amperes/1200 Volts
Preliminary
FREE-WHEEL SCHOTTKY DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
100
Tj = 25°C
80
Tj = 75°C
Tj = 125°C
60
Tj = 175°C
40
20
0
0
1
2
3
4
5
FORWARD VOLTAGE, VF, (VOLTS)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(MOSFET)
10110-3
10-2
10-1
100
101
Single Pulse
TC = 25°C
100
Per Unit Base = Rth(j-c) = 0.17°C/W
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10110-3
10-2
10-1
100
101
Single Pulse
TC = 25°C
100
Per Unit Base = Rth(j-c) = 0.28°C/W
10-1
10-1
10-1
10-1
10-2
10-2
10-2
10-2
10-3
10-5
TIME, (s)
10-4
10-3
10-3
10-3
10-5
TIME, (s)
10-4
10-3
10-3
4
04/12 Rev. 6
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