IXFE50N50 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXFE50N50 Datasheet PDF : 2 Pages
| |||
HiPerFETTM
Power MOSFET
Single Die MOSFET
IXFE 55N50
IXFE 50N50
VDSS
ID25
500 V 52 A
500 V 47 A
trr ≤ 250 ns
RDS(on)
80 mΩ
100 mΩ
Preliminary data sheet
Symbol Test Conditions
VDSS
VDGR
VGS
VGSM
ID25
IDM
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C; Note 1
IAR
EAR
dv/dt
PD
TJ
TJM
Tstg
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
VISOL
Md
50/60 Hz, RMS
IISOL ≤ 1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque
Weight
Maximum Ratings
55N50
50N50
55N50
50N50
500
V
500
V
±20
V
±30
V
47
A
53
A
200
A
220
A
55
A
60 mJ
5 V/ns
500
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
2500 V~
3000 V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
19
g
Symbol Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS
VGS = ±20V, VGS = 0V
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10V, ID = IT
Note 2
Characteristic Values
Min. Typ. Max.
500
V
2.5
4.5 V
±100 nA
TJ = 25°C
TJ = 125°C
55N50
50N50
400 µA
2 mA
80 m Ω
100 m Ω
ISOPLUS 227TM (IXFE)
S
G
G = Gate
S = Source
S
D
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• Low cost direct-copper bonded
aluminium package
• Encapsulating epoxy meets
UL 94 V-0, flammability classification
• 2500V isolation
• Low drain to case capacitance
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
• Conforms to SOT-227B outline
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Easy to mount
• Space savings
• High power density
© 2002 IXYS All rights reserved
98904 (2/02)
Share Link: 