IXFH11N80 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXFH11N80 Datasheet PDF : 4 Pages
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IXFH 11N80 IXFH 13N80
IXFM 11N80 IXFM 13N80
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 0.5 • ID25, pulse test
8 14
S
4200
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
360
pF
100
pF
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2 W (External)
20 50 ns
33 50 ns
63 100 ns
32 50 ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
128 155 nC
30 45 nC
55 80 nC
0.42 K/W
0.25
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0 V
11N80
13N80
ISM
Repetitive;
11N80
pulse width limited by TJM
13N80
VSD
IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr
TJ = 25°C
I =I
FS
T=
J
125°C
-di/dt = 100 A/ms,
QRM
V = 100 V
R
IRM
11 A
13 A
44 A
52 A
1.5 V
250 ns
400 ns
1
mC
8.5
A
TO-247 AD (IXFH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F
5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J
1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L
4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-204 AA (IXFM) Outline
Dim. Millimeter
Min. Max.
A 38.61 39.12
B 19.43 19.94
C 6.40 9.14
D 0.97 1.09
E 1.53 2.92
F 30.15 BSC
G 10.67 11.17
H 5.21 5.71
J 16.64 17.14
K 11.18 12.19
Q 3.84 4.19
R 25.16 25.90
Inches
Min. Max.
1.520 1.540
- 0.785
0.252 0.360
0.038 0.043
0.060 0.115
1.187 BSC
0.420 0.440
0.205 0.225
0.655 0.675
0.440 0.480
0.151 0.165
0.991 1.020
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
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