IXUC100N055 Ver la hoja de datos (PDF) - IXYS CORPORATION

Número de pieza

componentes Descripción

Fabricante

IXUC100N055

Trench Power MOSFET ISOPLUS220™

IXYS CORPORATION 

IXUC100N055

Symbol

Qg(on)

Qgs

Qgd

td(on)

tr

td(off)

tf

RthJC

RthCH

Test Conditions

Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

ISOPLUS220 Outline

VGS = 10 V, VDS = 14 V, ID = 50 A

100

nC

22

nC

36

nC

VGS = 10 V, VDS = 0.5 • VDSS,

ID = 25 A, RG = 10 Ω

35

ns

115

ns

230

ns

155

ns

1 K/W

0.30

K/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

VSD

INF o=te503 A, VGS = 0 V

trr

IF = 75A, di/dt = -100A/µs, VDS = 30 V

t Note: 1. MOSFET chip capability

2. Intrinsic diode capability

phase-ou 3. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

0.9 1.5 V

80

ns

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more 4,835,592 4,881,106 5,017,508 5,049,961

of the following U.S. patents:

4,850,072 4,931,844 5,034,796 5,063,307

5,187,117

5,237,481

5,486,715

5,381,025

6,306,728B1 6,259,123B1

6,404,065B1 6,162,665

6,306,728B1

6,534,343

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