IXST15N120BD1 Ver la hoja de datos (PDF) - IXYS CORPORATION
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IXST15N120BD1 Datasheet PDF : 2 Pages
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IXSH 15N120BD1
IXST 15N120BD1
Symbol
gfs
Cies
C
oes
Cres
Qg
Q
ge
Qgc
t
d(on)
tri
t
d(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
E
off
RthJC
R
thCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Note 2
7 9.5
S
V = 25 V, V = 0 V, f = 1 MHz
CE
GE
I = I , V = 15 V, V = 0.5 V
C
C90 GE
CE
CES
1400
pF
120
pF
37
pF
57
nC
14
nC
25
nC
Inductive load, TJ = 25°C
I = I , V = 15 V
C
C90 GE
RG = 10 W
VCE = 0.8 VCES
Note 3
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
R
G
=
10
W,
V
CE
=
0.8
V
CES
Note 3
(TO-247)
30
ns
25
ns
148 300 ns
126 250 ns
1.5 2.9 mJ
30
ns
25
ns
2.6
mJ
265
ns
298
ns
3.1
mJ
0.83 K/W
0.25
K/W
TO-247 AD (IXSH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F
5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J
1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L
4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-268AA (D3 PAK)
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IF = IC90, VGE = 0 V
TJ = 150OC
Note 2
T = 25OC
J
IRM
IF = 30A; VGE = 0 V; TJ = 100°C
V
R
=
100
V;
-di /dt
F
=
100
A/ms
1.7 V
2.5 V
5.5
A
t
rr
I
F
=
1
A;
-di/dt
=
200
A/ms;
V
R
=
30
V
T=
J
25°C
30
ns
RthJC
0.9 K/W
Notes: 1. Device must be heatsunk for high temperature leakage current measurements to
avoid thermal runaway.
2. Pulse test, t £ 300 ms, duty cycle £ 2 %
3. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ orincreased RG.
Min. Recommended Footprint
Dim. Millimeter
Min. Max.
A
4.9 5.1
A1
2.7 2.9
A2
.02 .25
b 1.15 1.45
b2
1.9 2.1
C
.4 .65
D 13.80 14.00
E 15.85 16.05
E1 13.3 13.6
e
5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
L2 1.00 1.15
L3 0.25 BSC
L4 3.80 4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2
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