IXFE34N100 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXFE34N100 Datasheet PDF : 2 Pages
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HiPerFETTM
Power MOSFET
Single MOSFET Die
IXFE 36N100
IXFE 34N100
VDSS
ID25
1000 V 33 A
1000 V 30 A
trr ≤ 250 ns
RDS(on)
0.24 Ω
0.28 Ω
Preliminary data sheet
Symbol Test Conditions
VDSS
VDGR
VGS
VGSM
ID25
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
IDM
TC = 25°C; Note 1
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
VISOL
Md
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS
IISOL ≤ 1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque
Weight
Maximum Ratings
36N100
34N100
36N100
34N100
1000
V
1000
V
±20
V
±30
V
33
A
30
A
144
A
136
A
36
A
64 mJ
4
J
5 V/ns
580 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
300 °C
2500 V~
3000 V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
19
g
Symbol Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS
VGS = ±20V, VGS = 0V
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10V, ID = IT
Note 2
Characteristic Values
Min. Typ. Max.
1000
V
3.0
5.0 V
±200 nA
TJ = 25°C
TJ = 125°C
36N100
34N100
100 µA
2 mA
0.24 Ω
0.28 Ω
ISOPLUS 227TM (IXFE)
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
•Conforms to SOT-227B outline
•Low RDS (on) HDMOSTM process
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS)
rated
•Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Low cost
• Easy to mount
• Space savings
• High power density
© 2002 IXYS All rights reserved
98897 (1/02)
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