IXFE180N10 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXFE180N10 Datasheet PDF : 2 Pages
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IXFE 180N10
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs
Ciss
Coss
Crss
td(on)
tr
t
d(off)
tf
Qg(on)
Qgs
Qgd
VDS = 10 V; ID = 60A, Note 2
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
R
G
= 1 Ω (External),
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
R
thJC
RthCK
Note: IT = 90 A
Characteristic Values
Min. Typ. Max.
60 90
S
9100
pF
3200
pF
1600
pF
50
ns
90
ns
140
ns
65
ns
360
nC
65
nC
190
nC
0.25 K/W
0.07
K/W
ISOPLUS-227 B
Source-Drain Diode
(TJ = 25°C, unless otherwise specified)
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
I
V =0
S
GS
I
Repetitive;
SM
Note1
V
I = 100 A, V = 0 V,
SD
F
GS
Note2
trr
Q
RM
I
F
=
50
A,
-di/dt
=
100
A/µs,
V
R
=
50
V
I
RM
180
A
720
A
1.5
V
250 n s
1.1
µC
13
A
Please see IXFN180N10 data
sheet for characteristic curves.
Notes:
1. Pulse width limited by TJM.
2. Pulse test, t ≤ 300 ms, duty cycle d ≤ 2 %
3. IT = 90A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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