IRF9530NPBF Ver la hoja de datos (PDF) - VBsemi Electronics Co.,Ltd
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IRF9530NPBF Datasheet PDF : 7 Pages
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IRF9530NPBF
www.VBsemi.tw
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VDS = 0 V, ID = - 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
VDS = - 60 V, VGS = 0 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 100 V, VGS = 0 V, TJ = 125 °C
VDS = - 100 V, VGS = 0 V, TJ = 150 °C
On-State Drain Currenta
ID(on)
VDS - 10 V, VGS = - 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V, ID = - 14 A
VGS = - 4.5 V, ID = - 12 A
Forward Transconductancea
gfs
VDS = - 20 V, ID = - 14 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V, VDS = - 20 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
VDS = - 20 V, VGS = - 10 V, ID = - 14 A
Gate-Drain Chargec
Qgd
Gate Resistance
Rg
f = 1 MHz
Turn-On Delay Timec
td(on)
Rise Timec
Turn-Off Delay Timec
tr
td(off)
VDD = - 20 V, RL = 2
ID - 10 A, VGEN = - 10 V, Rg = 1
Fall Timec
tf
Drain-Source Body Diode Ratings and Characteristics TC = 25 °Cb
Continuous Current
IS
Pulsed Current
ISM
Forward Voltagea
VSD
IF = - 10 A, VGS = 0 V
Reverse Recovery Time
trr
Peak Reverse Recovery Current
IRM(REC)
IF = - 10 A, dI/dt = 100 A/µs
Reverse Recovery Charge
Qrr
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min.
- 100
-1
- 18
0.5
Typ.
0.167
0.180
20
1765
330
280
67
13.5
14
2.5
10
11
42
12
- 0.8
38
2.3
40
Max.
- 2.5
± 250
-1
- 50
- 250
100
5
20
20
63
20
- 18
- 100
- 1.5
57
3.5
60
Unit
V
nA
µA
A
S
pF
nC
ns
A
V
ns
A
nC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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