IRF9530PBF Ver la hoja de datos (PDF) - Inchange Semiconductor

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componentes Descripción

Fabricante

IRF9530PBF

P-Channel MOSFET Transistor

Inchange Semiconductor 

isc P-Channel MOSFET Transistor

INCHANGE Semiconductor

IRF9530PBF

·FEATURES

·Static drain-source on-resistance:

RDS(on)≤0.3Ω

·Enhancement mode:

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

·DESCRIPTION

·Power management in notebook computer

·Portable equipment and battery powered systems

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

VDSS

Drain-Source Voltage

-100

VGS

Gate-Source Voltage

±20

ID

Drain Current-Continuous

-12

IDM

Drain Current-Single Pulsed

-48

PD

Total Dissipation @TC=25℃

85

Tj

Max. Operating Junction Temperature

175

Tstg

Storage Temperature

-55~175

UNIT

V

V

A

A

W

℃

℃

·THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth(j-c) Channel-to-case thermal resistance

Rth(j-a) Channel-to-ambient thermal resistance

MAX

1.76

62

UNIT

℃/W

℃/W

isc website：www.iscsemi.cn

1 isc & iscsemi is registered trademark

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