IRF9530NL Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Fabricante
IRF9530NL Datasheet PDF : 2 Pages
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isc P-Channel MOSFET Transistor
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤200mΩ(@VGS= -10V; ID= -8.4A)
·Advanced trench process technology
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Fast switching application.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID
Drain Current-Continuous
PD
Total Dissipation @TC=25℃
Tj
Max. Operating Junction Temperature
Tstg
Storage Temperature
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c)
Channel-to-case thermal resistance
IRF9530NL
VALUE
-100
±20
-14
79
-55~175
-55~175
UNIT
V
V
A
W
℃
℃
MAX
1.9
UNIT
℃/W
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