IDTQS3125DC Ver la hoja de datos (PDF) - Integrated Device Technology
Número de pieza
componentes Descripción
Fabricante
IDTQS3125DC
Integrated Device Technology
IDTQS3125DC Datasheet PDF : 5 Pages
| |||
IDTQS3125
HIGH-SPEED CMOS QUADRUPLE BUS SWITCH WITH INDIVIDUAL ENABLES
INDUSTRIAL TEMPERATURE RANGE
PIN CONFIGURATION
NC
1OE
1A
1Y
2OE
2A
2Y
GND
1
16
2
15
3
14
4
13
SO 16-7
5
12
6
11
7
10
8
9
VCC
4OE
4A
4Y
3OE
3A
3Y
NC
ABSOLUTE MAXIMUM RATINGS (1)
Symbol
VTERM(2)
VTERM(3)
VTERM(3)
VAC
IOUT
PMAX
TSTG
Description
Supply Voltage to Ground
DC Switch Voltage VS
DC Input Voltage VIN
AC Input Voltage (pulse width ≤20ns)
DC Output Current
Maximum Power Dissipation (TA = 85°C)
Storage Temperature
Max. Unit
– 0.5 to +7 V
– 0.5 to +7 V
– 0.5 to +7 V
-3
V
120
mA
0.5
W
– 65 to +150 °C
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
2. Vcc Terminals.
3. All terminals except Vcc.
QSOP
TOP VIEW
CAPACITANCE
(TA = +25OC, f = 1.0MHz, VIN = 0V, VOUT = 0V)
Pins
OE (Inputs)
Typ.
Max. (1)
Unit
3
5
pF
Quickswitch Channels (Switch OFF)
5
7
pF
NOTE:
1. This parameter is guaranteed but not production tested.
1OE
1A
1Y
2OE
2A
2Y
GND
1
14
2
13
3
12
4 SO 14-1 11
5
10
6
9
7
8
VCC
4OE
4A
4Y
3OE
3A
3Y
SOIC
TOP VIEW
PIN DESCRIPTION
Pin Names
1A - 4A
1Y - 4Y
1OE - 4OE
I/O
Description
I/O
Bus A
I/O
Bus B
I
Bus Switch Enable
FUNCTION TABLE(1)
nOE
nA
nY
L
H
H
L
L
L
H
X
X
NOTE:
1. H = HIGH Voltage Level
L = LOW Voltage Level
X = Don’t Care
Function
Connect
Connect
Disconnect
2
Share Link: