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ECG015(2006) Ver la hoja de datos (PDF) - WJ Communications => Triquint

Número de pieza
componentes Descripción
Fabricante
ECG015
(Rev.:2006)
WJCI
WJ Communications => Triquint WJCI
ECG015 Datasheet PDF : 5 Pages
1 2 3 4 5
ECG015
¼ Watt, High Linearity InGaP HBT Amplifier
The Communications Edge TM
Product Information
1960 MHz Application Circuit (ECG015B-PCB1960)
Typical RF Performance at 25 °C
Frequency
1960 MHz
Gain
16.5 dB
Input Return Loss
9 dB
Output Return Loss
9.5 dB
Output P1dB
Output IP3∗
(+9 dBm / tone, 1 MHz spacing)
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
Noise Figure
+24 dBm
+41 dBm
+17 dBm
5 dB
Device Voltage
+5 V
Quiescent Current
∗ Please see note 2 on page 1.
100 mA
DIODE1
ID=D1
+8 V
RES
ID=R1
R=30 Ohm
8.2 v
The diode D1 is used as over-voltage protection on the evaluation
boards. It is not specifically required in the final circuit layout in
a system using a D C regulator.
R ES
ID=R3
R =220 Ohm
RES
ID=R2
R=390 Ohm
PORT
P=1
Z=50 Ohm
CAP
ID=C6
C=56 pF
IND
ID=L2
L=15 nH
RES
ID=R4
R=22 Ohm
CAP
ID=C4
C=56 pF
IND
ID=L3
L=3.3 nH
CAP
ID=C7
C=1.2 pF
C7 placed at silkscreen marker ‘A†or center of component
placed at 3.9 deg. @ 1900 MHz away from pin 1.
IND
ID=L1
L=15 nH
SUBCKT
NET="ECG015"
CAP
ID=C8
C=1.2 pF
CAP
ID=C3
C=.1uF
CAP
ID=C2
C=1000 pF
CAP
ID=C1
C=56 pF
PORT
P=2
Z=50 Ohm
CAP
ID=C5
C=56 pF
C8 is placed at silkscreen
marker ‘7†or center of
component placed at 32 deg.
@ 1.9 GHz away from pin 3.
Ssg, OIP3 & P1dB vs.
Temperature @ 1.96GHz
26
44
ACPR1 vs. Pout
vs. Temperature at 1.96GHz
-40
24
43
-45
22
42
-50
20
41
18
40
-55
16
14
12
10
-40
Gain P1dB OIP3
-15 10 35 60
Temperature (°C)
39
38
37
36
85
-60
-65
-70
11
85°C -40°C 25°C
13
15
17
Pout (dBm)
2140 MHz Application Circuit (ECG015B-PCB2140)
Typical RF Performance at 25 °C
Frequency
2140 MHz
Gain
15 dB
Input Return Loss
Output Return Loss
20 dB
10 dB
Output P1dB
Output IP3∗
(+9 dBm / tone, 1 MHz spacing)
Noise Figure
+24 dBm
+41 dBm
5 dB
Device Voltage
+5 V
Quiescent Current
∗ Please see note 2 on page 1.
100 mA
24
22
20
18
16
14
12
-40
DIODE1
ID=D1
+8 V
R ES
ID=R1
R=30 Ohm
8.2 v
The diode D1 is used as over-voltage protection on the evaluation
boards. It is not specifically required in the final circuit layout in
a system using a D C regulator.
R ES
ID=R3
R =220 Ohm
RES
ID =R2
R=390 Ohm
PORT
P=1
Z=50 Ohm
C AP
ID=C6
C=56 pF
IND
ID=L2
L=15 nH
RES
ID=R4
R=22 Ohm
C AP
ID=C4
C=56 pF
IN D
ID =L3
L=3.3 nH
CAP
ID =C7
C=.7 pF
C7 placed at silkscreen marker ‘A†or center of
component placed at 4.4 deg. @ 2.14 GHz away
from pin 1.
Ssg, OIP3, & P1dB vs.
Temperature @ 2.14GHz
42
41
40
39
38
Ssg P1dB OIP3
-15
10
35
60
Temperature (°C)
37
36
85
IND
ID=L1
L=15 nH
SU BCK T
NET="ECG015"
C AP
ID=C8
C=1 pF
CAP
ID=C3
C=.1uF
CAP
ID=C2
C=1000 pF
CAP
ID=C1
C=56 pF
PORT
P=2
Z=50 Ohm
CAP
ID=C5
C=56 pF
C8 is placed at silkscreen marker ‘7†or
center of component placed at 37 deg. @
2.14 GHz away from pin 3.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
Page 3 of 5 October 2006

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