BF821 Ver la hoja de datos (PDF) - NXP Semiconductors.
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BF821 Datasheet PDF : 6 Pages
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NXP Semiconductors
PNP high-voltage transistors
Product data sheet
BF821; BF823
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VCBO
collector-base voltage
BF821
BF823
VCEO
collector-emitter voltage
BF821
BF823
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN. MAX. UNIT
−
−300 V
−
−250 V
−
−300 V
−
−250 V
−
−5
V
−
−50 mA
−
−100 mA
−
−50 mA
−
250 mW
−65 +150 °C
−
150 °C
−65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-a)
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector-base cut-off current
IEBO
hFE
VCEsat
Cre
fT
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
feedback capacitance
transition frequency
CONDITIONS
IE = 0; VCB = −200 V
IE = 0; VCB = −200 V; Tj = 150 °C
IC = 0; VEB = −5 V
IC = −25 mA; VCE = −20 V
IC = −30 mA; IB = −5 mA
IC = Ic = 0; VCB = −30 V; f = 1 MHz
IC = −10 mA; VCE = −10 V;
f = 100 MHz
MIN.
−
−
−
50
−
−
60
MAX.
−10
−10
−50
−
−800
1.6
−
UNIT
nA
µA
nA
mV
pF
MHz
2004 Jan 16
3
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