AM55-0004 Ver la hoja de datos (PDF) - M/A-COM Technology Solutions, Inc.
Número de pieza
componentes Descripción
Fabricante
AM55-0004 Datasheet PDF : 8 Pages
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AM55-0004
250 mW Linear Power Amplifier and T/R Switch
1.8—2.0 GHz
Recommended PCB Configuration
Rev. V2
External Circuitry Parts List
Label
Value
Purpose
C1 - C5
1000 pF
Low Frequency bypass
C6 - C8
68 pF
RF bypass
C9
1.5 pF
Output power tuning
C10
15 pF
Reduces low frequency gain
R1
2.7 k Ω
Voltage divider to VG2
R2
1.5 k Ω
Voltage divider to VG2
R3
150 Ω
Reduces low frequency gain
Tline
0.250 in. long
Power match
All off-chip components are low-cost surface mount components
obtainable from multiple sources. (0.020 in. x 0.040 in. or 0.030
in. x 0.050 in.)
External Circuitry
The PCB dielectric between RF traces and RF
ground layers should be chosen to reduce RF
discontinuities between 50-⏐ lines and package
pins. M/A-COM recommends an FR-4 dielectric
thickness of 0.008 in. (0.2 mm), yielding a 50-⏐ line
width of 0.015 in. (0.38 mm). The recommended
metalization thickness is 1 oz. copper. Shaded
traces are vias to DC routing layer and traces on
DC routing layer.
Biasing Procedure
The AM55-0004 requires that VGG bias be applied
prior to any VDD bias. Permanent damage may
occur if this procedure is not followed. All FETs in
the PA will draw excessive current and damage
internal circuitry.
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is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
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Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
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